Effect of Gaussian impurity parameters on the valence and conduction subbands and thermodynamic quantities in a doped quantum wire

Abstract

In this paper, the influence of impurity parameters on the energy-dispersion spectrum of electrons and holes in a doped quantum wire with Gaussian impurity is studied. The numerical calculations have shown that the energy eigenvalues enhance, if the confinement of carriers increases. Then, the energy eigenvalues rise when the magnetic field, decay length and strength of impurity increase. Also, the type of impurity affects the energy subband structures. So that, the presence of attractive impurity reduces the energy eigenvalues, as compared to repulsive impurity. Moreover, the role of impurity parameters and the external magnetic field as a control parameter on the thermal quantities has been demonstrated in details. The results show that enhancement of magnetic field, decay length and strength of repulsive impurity decreases (increases) the entropy (internal energy) of quantum wire.