Abstract
A two-dimensional (2D) analytical model based on the Green’s function method is applied to an n+-p thin film polycrystalline solar cell that allows us to calculate the conversion efficiency. This model considers the effective Gaussian doping profile in the p region in order to improve cell efficiency. The dependence of mobility and lifetime on grain doping is also investigated. This model is implemented through a simulation program in order to optimize conversion efficiency while varying thickness and doping profile in the base region of the cell. Compared with n+-p standard structure, our proposed structure shows a 43% improvement in conversion efficiency for a polycrystalline solar cell.
Highlights
The important factor in photovoltaic production is cell cost
The dependence of mobility and lifetime on grain doping is investigated. This model is implemented through a simulation program in order to optimize conversion efficiency while varying thickness and doping profile in the base region of the cell
Other techniques are used to reduce the effect of back surface recombination velocity by means of the Back Surface Field technique (BSF) [7]
Summary
The important factor in photovoltaic production is cell cost. One of the promising ways of reducing this cost is by reducing direct material cost. Polycrystalline silicon is the most convenient and most used material for solar cells because of its low production cost as well as its reasonable conversion efficiency [1,2]. Other techniques are used to reduce the effect of back surface recombination velocity by means of the Back Surface Field technique (BSF) [7]. These techniques have to be used to improve the collection of photo generated carriers at the depletion edge so as to increase the conversion efficiency of the cell. We use a two-diode electrical model in order to determine the conversion efficiency of the considered cell. We compare the performance of the considered cell with standard structure
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