Effect of gate length on performance of 5nm node N-channel nano-sheet transistors for analog circuits

Abstract

In this work, the effect of channel length on the performance of an N-channel Nano-sheet Transistor (NST) for analog circuits has been investigated. A fully-calibrated TCAD platform is used to evaluate the performance of NST devices with channel lengths ranging from 10 nm to 240 nm. The maximum transconductance measured is 0.65 mS for gate length of 24 nm. In addition, the transconductance efficiency ranging from 3 V−1 to 38 V−1 is observed. Intrinsic gain increases from 7.3 to 121.65 as the gate length is varied from 10 nm to 240 nm. For 12 nm gate length, a unit gain frequency of 565 GHz is observed. NST with 24 nm exhibits Gain Frequency Product value of 5.3 THz. The gain-to-power efficiency improvement from 0.048 µA−1 to 2.16 µA−1 is observed. A reversal of relationships of transconductance and other performance parameters with gate length is observed at 24 nm gate length.