Effect of gas pressure on the growth of selenium thin films by pulsed laser deposition

Abstract

The effect of an inert gas pressure on the structure of selenium thin films has been systematically investigated in the pulsed laser deposition process. The ablated material is deposited on Au (111) gold thin films for its characterization by atomic force microscopy (AFM). Analysis of the surface morphology shows that instead of the formation of a uniform Se thin film on top of Au (111) terraces, as it occurs in high vacuum, the film grows as two dimensional ellipsoid shaped aggregates. The size of these Se aggregates increases significantly with the gas pressure and reaches a maximum at pressures of ∼1.5 Torr, and subsequently decreases with further increase of the gas pressure. This effect is probably due to the fact that the kinetic energy of the impinging species decreases as pressure increases, thus impeding diffusion on the substrate surface. However, further increase in the pressure prevents the Se species from being deposited on the substrate resulting in a decrease in size of the aggregates.