Abstract
Vanadium dioxide was manufactured as thin films on the Sapphire substrate with magnetron sputtering methods in this work. It is shown that the threshold voltage of Vanadium dioxide’s Metal-Insulator Transiton (MIT) can be adjusted within a certain range through optimizing deposition processes in order to meet the demands of practical applications. Meanwhile, the influence of sputtering pressure on film growth was analyzed, and the regularity between experimental processes and the growth trend of grains was summarized as well as crystal surface structure. Furthermore, the E-MIT characteristics of Vanadium dioxide thin films were also measured to evaluate their switching properties in a constant temperature test system. And the effects of oxygen-argon ratio used in sputtering were estimated on to the critical field of MIT and the variation of films’ conductivity.
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