Abstract
AbstractEffect of (GaN/AlN) alternating‐source‐feeding (ASF) buffer layer was investigated in the growth of GaN on Al2O3 and Si substrates by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE). The formation process of ASF buffer layer was different between the cases on Al2O3 and Si substrates. Nevertheless, GaN films with two‐dimensional surface were obtained on both ASF buffer layers on Al2O3 and Si substrates. The residual strain of GaN films was changed by changing the growth condition of the ASF buffer layers. Without any selection of substrates, it is expected to achieve the precisely controlled strain state of GaN films by adjusting the structure of the ASF buffer layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
