Effect of (GaN/AlN) alternating‐source‐feeding buffer layer in GaN growth on Al2O3 and silicon by RF‐MBE

Abstract

AbstractEffect of (GaN/AlN) alternating‐source‐feeding (ASF) buffer layer was investigated in the growth of GaN on Al2O3 and Si substrates by radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE). The formation process of ASF buffer layer was different between the cases on Al2O3 and Si substrates. Nevertheless, GaN films with two‐dimensional surface were obtained on both ASF buffer layers on Al2O3 and Si substrates. The residual strain of GaN films was changed by changing the growth condition of the ASF buffer layers. Without any selection of substrates, it is expected to achieve the precisely controlled strain state of GaN films by adjusting the structure of the ASF buffer layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)