Abstract
A new hybrid monolithic silica xerogel containing sucrose has been synthesized via the sol–gel method. The resulting sucrose silica xerogels were exposed to gamma radiation with a dose in the range of 10–100kGy. The effect of gamma rays on the physical and structural properties of sucrose silica xerogels was investigated by Fourier transform infrared spectroscopy (FTIR) and UV visible spectroscopy. The results of FTIR spectroscopy show that the irradiation process causes changes in the network's structure by inducing defects. The UV visible spectra present three main band defects; E′ center, Non-Bridging Oxygen Hole center (NBOHC) and carbonyl radicals in irradiated sucrose silica xerogel samples. Additionally, the results show that the values of optical band gap energy depend on irradiation. Therefore, generated defects suggest that the behavior of sucrose silica xerogels was modified from an insulator (Eg=5.82eV) to a semiconductor (Eg=3.16eV) under gamma irradiation.
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