Abstract
We have studied the influence of gamma irradiation in a 60Co source (1.25 MeV, gamma doses from 102 to 106 Gy) and subsequent storage for a year on the structure, fundamental absorption edge, and refractive index of a-GeSe films prepared by flash evaporation in vacuum on silica substrates (Ts = 293 K). The high-energy irradiation has been shown to stimulate structural transformations and to produce changes in the electron-defect subsystem of the films.
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