Effect of gamma irradiation on the dielectric properties and electrical conductivity of the TlInS2 single crystal

Abstract

The effect of gamma irradiation on the dielectric properties and ac conductivity of a TlInS2 single crystal with a layered structure has been investigated in the frequency range from 5 × 104 to 3.5 × 107Hz. It has been shown that gamma irradiation of the TlInS2 single crystal with a dose of 104–2.25 × 106 rad leads to a considerable increase in the dielectric loss tangent tanδ, the real part ɛ′ and imaginary part ɛ″ of the complex permittivity, and the ac conductivity σac across the layers. It has been established that, for all gamma irradiation doses, the TlInS2 single crystal is characterized by the dielectric loss due to electrical conduction up to a frequency of 107 Hz and by the relaxation loss at a higher frequency. Irradiation of the TlInS2 single crystal results in an increase in the dispersion of tan δ, ɛ′, and ɛ″. It has been demonstrated that, as the gamma irradiation dose is accumulated in the TlInS2 single crystal, the density of localized states near the Fermi level NF increases (from 5.2 × 1018 to 1.9 × 1019 eV−1 cm−3).