Effect of gamma irradiation on GaN lateral Schottky barrier diodes

Abstract

The effect of gamma irradiation on GaN lateral Schottky barrier diodes (SBDs) has been investigated. Six gamma irradiation conditions were carried out, namely 100/500 k rad, 1 M rad, 100/500 k rad and 100°C, and 1 M rad and 100°C. All the irradiated devices have a similar parameter variation tendency. There is no change for turn-on voltage. The on-state resistance is reduced from 5.32~5.53 Ω to 5.10~5.26 Ω, while the reverse leakage at -100 V is increased from 3.53~4.99 μA to 4.13~5.79 μA. The interface information extracted is improved slightly, demonstrating the anode/GaN interface is improved, and the passivation/AlGaN interface may be degraded. The slight variation of irradiated performance demonstrates that the GaN lateral SBDs are hardly affected by gamma irradiation.