Effect of Gamma Irradiation on Conductivity of Cd1 – xFexTe

Abstract

The effect of γ-irradiation at the dose Dγ = 605.6 kGy on the temperature dependences of conductivity and dielectric permittivity of Cd1 – xFexTe semimagnetic semiconductors were investigated. The character of the e(T) dependences of the irradiated Cd1 – xFexTe changes: there is a drop in the curves in the temperature range of 300–400 K at measurement frequencies 10 kHz–1 MHz, and e increases by 20 times. In the σ(T) dependence, at all measurement frequencies a maximum appears at a temperature of 400 K and conductivity increases by 40 times. We assume that the character of the temperature dependences of dielectric permittivity and conductivity corresponds to the ionic conductivity.