Abstract
Semiconducting films of CuIn1 − xGaxSe2 solid solutions have been produced on CdS by selenizing metallic layers in flowing nitrogen. We have optimized the film growth conditions and investigated the structure, electrical properties, energy band structure, and photoconversion quantum efficiency of the films. With increasing gallium content, the band gap of the CuIn1 − xGaxSe2 (x = 0, 0.2, 0.25, 0.30) films increases, reaching 1.27 eV. The films are potentially attractive for use in high-efficiency solar cells.
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