Abstract
The finite intraband relaxation time in semiconductor lasers leads to gain saturation at high laser powers. The nonperturbative solution of the single-mode density-matrix equations shows that both the optical gain and the refractive index become intensity dependent as a result of intraband relaxation dynamics. Gain and index nonlinearities are included in the rate equations, and how the modulation response and noise characteristics of semiconductor lasers are affected by such nonlinearities is studied. The intensity dependence of the frequency and the damping rate of relaxation oscillations leads to a fundamental limit imposed on the small-signal modulation bandwidth; the analysis provides an expression for the ultimate modulation bandwidth in terms of the material parameters. >
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