Effect of GaAs MESFET's imperfections, gamma-radiation, and temperature on the performance of microwave active filters

A.s El-Kabbani ,F A Soliman ,Adam El‐Shahat ,F.m Farag

doi:10.1109/icmel.1997.632965

Effect of GaAs MESFET's imperfections, gamma-radiation, and temperature on the performance of microwave active filters

A.s El-Kabbani , F A Soliman + Show 2 more

https://doi.org/10.1109/icmel.1997.632965

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Publication Date: Sep 14, 1997

Affiliation: Al Azhar University, Nuclear Materials Authority

#Performance Of Active Filters #Performance Of Microwave + Show 8 more

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Abstract

An investigation has been presented for the effect of imperfections of NE71000 GaAs MESFET's on the performance of microwave second-order active band-pass filters. The cascaded technique is used for the design and construction of a fourth-order systems. The frequency responses for both the actual, ideal, and predistortion cases were obtained using computer simulation program (SPICE). The frequency responses are evaluated when the system operates at different conditions of temperature (-50 to 150/spl deg/C) and radiation (/spl gamma/-rays up to 80 Mrads).

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