Abstract
Ternary compound AlxGa1-xN thin films were grown on sapphire substrates by the dual-beam pulsed laser deposition (PLD) method in N2 atmosphere. Due to Ga re-evaporation, a compositional change of the film developed with change of the growth temperature. The activation energy of Ga re-evaporation was estimated to be 1–2 eV which was about 1 eV lower than that so far obtained for molecular-beam-epitaxy.
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