Abstract
AbstractCu(In,Ga)Se2 (CIGS) thin films were deposited on the Mo/heat‐resistant glasses (SS‐8, Nippon Electric Glass) by the three‐stage evaporation process. The coefficient of thermal expansion (CTE) of SS‐8 is 8.4×10–6/K, strain point of SS‐8 is 582 °C. SS‐8 has the CTE similar to that of SLG but higher thermal tolerance. Substrate temperature (Tsub) during deposition and Ga/(In+Ga) atomic ratio of CIGS thin films were controlled to 550∼600 °C and 0∼0.7, respectively. The effect of Tsub and Ga/(In+Ga) atomic ratios of CIGS films have been characterized by electron backscatter diffraction (EBSD) measurements. Grain size and ∑3 grain boundary ratio increased at higher Tsub. ∑3 grain boundary ratio was calculated from the fraction of the length of ∑3 grain boundary by the length of the total grain boundaries on EBSD image. There was the correlation among Ga contents, Tsub, grain size and efficiency. It is difficult to distinguish between effect of grain size and effect of grain boundary to efficiency. However, it is found that high Ga content up to 0.7 results in both high efficiency and ∑3 grain boundary ratio. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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