Abstract
Complexing agents in Cu chemical mechanical polishing (CMP) slurry have an important role for enhancing Cu removal rate. To understand the effects of complexing agents on the performance of Cu CMP slurry, selected complexing agents which have different functional groups were investigated. It was observed that the Cu dissolution rate was varied with the change of types and numbers of functional groups of complexing agents. By using UV-visible analysis, the changes of complex form with pH were monitored and expected reaction mechanisms were proposed. The effect of Cu oxide formation was also monitored by the coulometric reduction method (CRM) analysis. Based on CRM analysis, the evaluation of Cu oxide thickness which formed on the Cu surface during the dissolution was conducted and the relationships between formed Cu oxide thickness on the surface and Cu dissolution rate were discussed.
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