Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN

Abstract

A GaN thin film was implanted with 5×1014cm−2 of 60keV stable 166Er, followed by the implantation of 2×1013cm−2 radioactive 167Tm (t1/2=9.3d) and an annealing sequence up to 900°C. The emission channeling (EC) technique was applied to assess the lattice location of Er following the Tm decay from the conversion electrons emitted by 167mEr, which showed that more than 50% of 167mEr occupies substitutional Ga sites. The results are briefly compared to a 167mEr lattice location experiment in a GaN sample not pre-implanted with 166Er. In addition, high-resolution X-ray diffraction (HRXRD) was used to characterize the perpendicular strain in the high-fluence implanted film. The HRXRD experiments showed that the Er implantation resulted in an increase of the c-axis lattice constant of the GaN film around 0.5–0.7%. The presence of significant disorder within the implanted region was corroborated by the fact that the EC patterns for off-normal directions exhibit a pronounced angular broadening of the order of magnitude of 0.5°.