Abstract
The scattering rate and free-carrier optical-absorption coefficient for nonpolar dispersionless intervalley scattering is determined for interaction matrix elements of first order in the phonon wave vector. This scattering mechanism is known to be significant at high electron temperatures in Si and its effect on the optical properties is discussed. Comparison with experimental data for n-type Si shows improved correlation with the absorption coefficient in the near infrared, with use of deformation potentials which are consistent with the electron transport properties.
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