Abstract
In this brief, electrical characteristics of 25-nm round-top-gate fin-typed field-effect transistors (FinFETs) on silicon wafers are numerically explored. With an ideal fin angle (i.e., thetas = 90deg), the FinFETs with doped and undoped (for this case, the device has a metal gate) channels that was fabricated on silicon and silicon-on-insulator wafers are simulated and compared. With a 3-D quantum-correction-transport simulation, characteristic comparison shows that bulk FinFETs with the undoped channel possess promising electrical characteristics. By considering different short-channel effects, dependence of the device performance on the nonideal fin angle and fin height is further investigated. Optimal structure configuration for the round-top-gate bulk FinFETs is thus drawn to show the strategy of fabrication in sub-25-nm MOSFET devices.
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