Abstract
SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates. A device with a structure of soda-lime glass/Mo/SnSe/CdS/i-ZnO/ITO/Ni/Al was fabricated. Device efficiency was improved from 0.18% to 1.02% by a film thickness of 1.3 μm and evaporation rate of 2.5 Å S−1via augmentation of short-circuit current density and open-circuit voltage. Properties (electrical, optical, structural) and scanning electron microscopy measurements were compared for samples. A SnSe thin-film solar cell prepared with a film thickness of 1.3 μm and evaporation rate of 2.5 Å S−1 had the highest electron mobility, better crystalline properties, and larger grain size compared with the other solar cells prepared. These data can be used to guide growth of high-quality SnSe thin films, and contribute to development of efficient SnSe thin-film solar cells using an evaporation-based method.
Highlights
The extensive electronic transitions between delocalized and localized energy-band states ensure that chalcogenides based on transition metals have good optical and electrical properties
The structure was observed by Xray diffraction (XRD) using a Rigaku D/max 2550 V system with Cu Ka radiation
Surface morphology was investigated by scanning electron microscopy (SEM) using a JEOL setup
Summary
The extensive electronic transitions between delocalized and localized energy-band states ensure that chalcogenides based on transition metals have good optical and electrical properties. Among binary compounds in transition metals, SnSe has great application prospects because SnSe has an orthorhombic crystal structure,[6] which is suitable for solar cells. Several studies have not paid attention to the in uence of the evaporation rate and lm thickness on the structure, surface morphology, optical properties and electrical properties of SnSe thin lms, which limits the power-conversion efficiency of solar cells made from SnSe thin lms. SnSe thin- lm solar cells with a soda-lime glass (SLG)/Mo/SnSe/CdS/i-ZnO/ITO/Ni/Al structure were prepared and showed optimal conversion efficiency of 1.02% at an evaporation rate of 2.5 A SÀ1 and lm thickness of 1.3 mm
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