Abstract
In this paper an analytical model of emitter saturation current of a silicon solar cell has been developed to show the effects of field dependent carrier mobility and of both doping dependent SRH and Auger recombination mechanisms in a non-uniformly doped emitter. In developing this model the doping dependency of carrier lifetime as well as the bandgap narrowing effect due to heavy emitter doping level is considered. An exponential approximation technique is used to deduce an analytically solvable governing differential equation. The developed model shows that the emitter saturation current has significantly varied due to the field-dependency of carrier mobility for thin emitter as well as simultaneous consideration of both SRH and Auger recombination for wide emitter.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
