Abstract
The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe3Si on Ge substrate have been investigated in a wide range of growth temperatures (60-300oC). From XRD measurements, it was found that Fe3Si layers were epitaxially grown on Ge(111) substrates at 60-200oC under the stoichiometric (Fe/Si ratio of Fe:Si=3:1) and non-stoichiometric (Fe/Si ratio of Fe:Si=4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe3Si/Ge interfaces began at a growth temperature of 300oC. In the case of MBE under the stoichiometric condition (Fe:Si=3:1), the crystallinity of Fe3Si is significantly improved compared to the non-stoichiometric condition (Fe:Si=4:1). As a result, very low χmin was obtained in a wide temperature (60-200oC) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe3Si/Ge structures with atomically flat interfaces were realized at a low temperature (~200oC) under the stoichiometric condition.
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