Effect of Ferroelectric Polarization Domain Structure on Electronic Transport Property of Ferroelectric/ZnO Heterostructure

Abstract

To discuss the effect of the ferroelectric domain structure on the electronic transport property in the channel of a ferroelectric gate thin film transistor, the electrical property of the ferroelectric gate stack structure of an organic ferroelectric copolymer of vinylidenefluoride and tetrafluoroethylene [P(VDF–TeFE)] and ZnO was investigated. Unlike the gate stack structure using a paraelectric layer, ferroelectrics possibly affect the electron transport in the channel through its domain structure. In this study, the Hall-effect measurements were carried out at various polarized states of P(VDF–TeFE). The Hall mobility at poling voltages from 100 to -100 V showed a gradual decrease with decreasing poling voltage, whereas the carrier concentration shows a slight change in the accumulation state. The change in the carrier concentration indicates the formation of the multidomain structure in P(VDF–TeFE). The multidomain structure might be attributed to the electron scattering in the ZnO channel layer.