Abstract
Specific mechanisms of grain structure effect on the thermoelectric properties (specific electrical resistivity and total thermal conductivity) of the Bi1.9Gd0.1Te3 compound have been analyzed. These mechanisms are as follows: 1) forming the surface Te vacancies at grain boundaries acting as donor centres; 2) changing the elemental composition of the grains at high-temperature Te evaporation under thermal treatment of material to prepare the samples with desired average grain size.
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