Abstract
Effects of fast annealing on the properties of SiO2/Si structures with thin, ∼10 nm, layers of anodic silicon oxide formed on single-crystal Si substrates are studied in relation to the semiconducting properties of the silicon support and to the duration, temperature, and environment of thermal treatment. The optimal duration of high-temperature annealing of structures in an inert atmosphere for their application in the technology of nanosize MOS integrated circuits is determined.
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