Abstract
Detectors based on modern CVD-grown films were irradiated with 8 MeV protons at a fluence of 3 × 1014 cm−2. The concentration of primary radiation defects was ∼1017 cm−3, which is three orders of magnitude higher than the concentration of the initially present uncompensated donors. The resulting deep compensation of SiC enabled measurements of detector parameters in two modes: under reverse and forward bias. The basic parameters of the detectors degraded by no more than a factor of 1.7, compared with the fluence of 1 × 1014 cm−2. However, there appeared a polarization voltage, which indicates that a space charge is accumulated by radiation defects.
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