Abstract
The lifetime of excess carriers in a nondegenerate semiconductor which is illuminated with a light in fundamental absorption band and a longer wavelength light is discussed. The recombination equations for many recombination-center levels in the presence of a steady external illumination are formulated. For steady-state case these equations can be solved exactly, but transient solutions are obtained only for specific cases. These results show that both steady-state and transient lifetimes are identical for small densities of recombination centers. This simple lifetime for single recombination-center level case is discussed.
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