Effect of external electric field on spin-orbit splitting of the two-dimensional tungsten dichalcogenides WX2 (X = S, Se)

Abstract

Tungsten dichalcogenides WX2 (X=S, Se) monolayer (ML) attracted much attention due their large spin splitting, which is promising for spintronics applications. However, manipulation of the spin splitting using an external electric field plays a crucial role in the spintronic device operation, such as the spin-field effect transistor. By using first-principles calculations based on density functional theory (DFT), we investigate the impact of external electric field on the spin splitting properties of the WX2 ML. We find that large spin-splitting up to 441 meV and 493 meV is observed on the K point of the valence band maximum, for the case of the WS2 and WSe2 ML, respectively. Moreover, we also find that the large spin-orbit splitting is also identified in the conduction band minimum around Q points with energy splitting of 285 meV and 270 meV, respectively. Our calculation also show that existence of the direct semiconducting – indirect semiconducting – metallic transition by applying the external electric field. Our study clarify that the electric field plays a significant role in spin-orbit interaction of the WX2 ML, which has very important implications in designing future spintronic devices.