Abstract
Sol-gel-derived lanthanum-modified lead zirconate titanate (PLZT) thin films with a La/Zr/Ti ratio of 10/65/35 and a lead lanthanum titanate (PLT) thin seeding layer were successfully deposited on an indium tin oxide (ITO)-coated soda lime glass substrate at 500°C. Effects of excess lead addition of different concentrations in the precursor solution on the electrical properties of the resultant PLZT thin films were investigated. As a result, the relative permittivity increased and the dissipation factor decreased with the increase of excess lead concentration. Excess lead of 30 mol% was indispensable for obtaining PLZT thin film with good ferroelectricity. In addition, the resultant films showed more than 60% transmittance in the visible region.
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