Abstract
The dry etching of iridium(Ir) and iridium oxide(IrO2) using a hard mask has been studied in a high density Inductively Coupled Plasma (ICP). The etch rate and etch selectivity have been obtained in terms of gas chemistry including CI2/O2/Ar, HBr/O2/Ar, and C2F6/O2/Ar gases. The etch profile and the etch mechanism have been examined for various etch gases by using field emission scanning electron microscopy (FESEM) and field emission auger electron spectroscopy (FEAES). In addition, the electrical properties of the etched ferroelectric capacitors were measured for each etching gas.
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