Abstract
The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300–420K. Comparing the current–voltage (I–V) characteristics of two samples with epitaxial layer thicknesses of 2μm and 1.5μm discloses that the device with a thinner epitaxial layer has a higher barrier height and hence a lower reverse current. Specifically, we found that increasing the Al0.33Ga0.67As thickness from 1.5μm to 2μm would lower the value of the barrier height by ∼12% at 300K. We associated such retrogression of the electrical quality to the presence of deep level traps in the Si:AlxGa1−xAs layer. For both samples we found that the effective barrier height decreases with increasing the annealing temperature. Yet, the sample with a thinner layer showed more stability and less temperature dependence.
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