Abstract
A route to high-purity nanocrystalline diamond films from C2 dimers and related mechanisms have been investigated by enhancing C2 growth chemistry in Ar-rich microwave plasmas. Efficient C2 production by direct dissociation from acetylene causes the micro- to nanocrystal transition with a low threshold Ar concentration of ∼70% and produces films of ∼20nm grains with a distinct visible-Raman peak of diamond. C2 grows nanodiamond on diamond surfaces but rarely initiates nucleation on foreign surfaces. The phase purity can be improved by increasing the dominance of nanodiamond growth from C2 over nondiamond growth from CHx(x=0–3) and large radicals.
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