Abstract
SnO2:Sb thin films are grown by pulsed laser deposition with high-speed particle separation on quartz-glass substrates without post-deposition annealing under different deposition conditions in the range of the energy densities on the target from 3.4 to 6.8 J/cm2. Their optical, structural, and electrical properties are studied. It is found that the energy density on the target affects the SnO2:Sb film conductivity and transmittance. The optimum conditions of film growth by the droplet-free pulsed laser deposition method are determined. A resistivity minimum of 1.2 × 10–3 Ω cm is observed at an energy density on the target of 4.6 J/cm2, a substrate temperature of 300°C, and an oxygen pressure of 20 mTorr in the vacuum chamber during deposition.
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