Abstract
This study provides important insights in performance degradation of In2O3-MWCNTs (0.4 and 0.5 wt. %)-based DSSC using chemical-bath deposition technique. In2O3-MWCNTs (0.4 wt. %) exhibited the highest power conversion efficiency of 0.312% with low electron recombination rate, keff of 1256.72 s−1, and faster electron lifetime, τeff of 0.80 ms compared to In2O3-MWCNTs (0.5 wt. %). The energy band misalignment between the conduction band of In2O3 photoanode and FTO caused severe electron recombination in In2O3-MWCNTs (0.5 wt. %). Therefore, this study can be used as a benchmark of 0.4 wt. % as the optimum concentration of MWCNTs in In2O3 for DSSC.
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