Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology

Abstract

End-of-range (EOR) defects generated during the crystal orientation conversion process in DSB technology can give rise to various types of junction leakage depending on their locations relative to device structures. A wide range of EOR defect depths are investigated. Shallow-implant-induced EOR defects (~100 nm) are found to minimize junction leakages due to EOR defects being outside of junction depletion regions. These implant conditions produce no adverse impact on source/drain channel leakage, suggesting that the crystal conversion process is optimized by shallow implants.