Abstract
Effect of spacer layer design between InP emitter and GaAsSb base in InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) grown by MOCVD was investigated. A very thin tensile-strained GaAs layer, or a thin GaInP layer, or combination of both was inserted between InP emitter and GaAsSb base to mitigate Sb segregation and/or eliminate electron pile-up between emitter and base. With a base sheet resistances of ∼1800 ohm sq−1 for all devices, DHBTs with a GaAs spacer, a GaInP spacer and the combination demonstrate a current gain of 24, 49 and 64, respectively. The conduct band discontinuity ΔEc at InP/GaAsSb interfaces and the current blocking effect are effectively eliminated by employing the combination of GaAs and GaInP layers.
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