Abstract
The intravalley acoustic scattering rate has been calculated here taking the screening by non-equilibrium electrons into account under the condition when the lifetime of the electrons is controlled by shallow attractive traps at low lattice temperature. The scattering rates now turn out to be field dependent and the characteristics are significantly different from what follows when the electron ensemble is in equilibrium with the lattice. The results indicate the possibility of interesting non-ohmic transport characteristics under these conditions. Numerical results are obtained for high purity samples of Si.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
