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Abstract
Using time-resolved photoluminescence and time-resolved Kerr rotation spectroscopy, we explore the unique electron spin behavior in an InAs submonolayer sandwiched in a GaAs matrix, which shows very different spin characteristics under resonant and non-resonant excitations. While a very long spin relaxation lifetime of a few nanoseconds at low temperature is observed under non-resonant excitation, it decreases dramatically under resonant excitation. These interesting results are attributed to the difference in electron–hole interactions caused by non-geminate or geminate capture of photo-generated electron–hole pairs in the two excitation cases, and provide a direct verification of the electron–hole spatial correlation effect on electron spin relaxation.
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