Abstract
The effect of 5-MeV electron irradiation of p-InxBi2−xTe3 single crystals (x=0, 0.04, 0.07), performed at 250 K, on the galvanomagnetic properties of the crystals was studied. The irradiation was shown to change the conduction from the p to the n type. Annealing at temperatures of 310–390 K restores the conduction to the p type. The reversal of the conduction type and variation of the carrier concentration can be accounted for by an increase in the concentration of charged point radiation defects produced in InxBi2−xTe3 by irradiation. Electron irradiation of p-type Te single crystals reduces the electrical resistivity without reversing the conduction type. Annealing restores the original properties almost completely.
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