Abstract
Effects of 2MeV electron irradiation on electrical properties of CuInSe2 thin films have been investigated, n-type CuInSe2 films in which carrier concentration were about 2×1017cm-3, were epitaxially grown on GaAs(001) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence less than 1016cm-2. As the electron fluence exceeded 1017cm-2, both carrier concentration and Hall mobility slightly decreased. The carrier removal rate was determined to be about 1cm-1, which is lower, compared to III-V compound materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
