Abstract
Aluminum single crystals of 99.999% initial purity were irradiated at 80°K with 1 MeV electrons to total dose of 1.2 ~ 8 × 10 17 el/cm 2. The flow stress was measured at 77°K over the strain rate range 5 × 10 −4 to 4 × 10 −3 and increased with irradiation. A larger increase for the higher strain rate was observed. The increase is interpreted to be due to interstitials which have migrated to dislocations and have been absorbed heterogeneously by making superjogs or kinks, which produce resistance to motion of the dislocations. An interruption of tensile test for a short time resulted in a yield drop which was found only in the irradiated crystals. This yield drop may be due to the Cottrell locking of the interstitials which were freed from impurity trapping sites by glide dislocations. Annealing at room temperature resulted in recovery of the hardening caused by the irradiation. Migration of vacancies or divacancies to the dislocation having interstitial jogs may produce the recovery.
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