Abstract
The characteristic curve showing transmission versus exposure for an image converter using Bi12SiO20 single crystal was analyzed by a simple model in which crystal absorption, carrier diffusion, and recombinations between electrons and holes were considered. The variation of transmission with exposure was represented by a system of equations. The system of equations was solved numerically by an iterative technique using a computer. Results of the theoretical analysis were compared with experimental results. It was shown that the electron-hole recombination was important in the performance of the device.
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