Effect of electron heating on electron capture cross section in very small metal-oxide-semiconductor transistors

Abstract

The effect of electron heating on random telegraph signals due to oxide traps in deep-submicron n-channel MOSFETs is shown. A simple theoretical model gives a good description of the observed results. The mean capture time depends on the local velocity and temperature of channel electrons near the trap. The difference between the forward and reverse mode (source and drain exchanged) provides an estimate of the trap location along the channel.