Abstract
A vacuum integrated cluster tool process incorporating electron cyclotron resonance plasma cleaning, Ti sputter deposition, and rapid thermal annealing in N/sub 2/ is used to form a TiN/sub x 150 eV Ne/sup +/ promotes silicidation, thereby minimizing nitride thickness. The effects of precleaning are significant as the activation energy for TiSi/sub y/ formation is reduced from 1.8 eV characteristic of a BOE cleaned surface to 1.2 eV on Si etched with 250 eV Ne/sup +/. Mechanistically, the silicide kinetics are shown to be inhibited by the presence of a thin amorphous layer that is formed only when cleaning Si with Ar/sup +/ and Xe/sup +/ with the effect that both knock-on oxygen atoms and implanted noble gas atoms trapped within the amorphous layer retard the requisite solid-phase epitaxial regrowth kinetics. Recrystallizing the amorphous Si surface prior to metallization appears to restore the near-normal silicide kinetics that is characteristic of Ne/sup +/ cleaning. >
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