Abstract

AbstractTungsten, aluminum oxide and Ti films were deposited onto a Cu substrate by means of a rf magnetron sputtering method. TEM thin foils for cross-sectional irradiation were prepared using a focused ion beam (FIB). Electron irradiation was carried out in a Hitachi H- 1300 electron microscope at I MV. The specimen temperatures during irradiation were 300, 473, 623 and 703K. The phases of W, aluminum oxide and Ti films were identified from selected area diffraction patterns as bcc, amorphous and hcp phases, respectively. The phases of W and Ti did not change due to irradiation. However, the amorphous aluminum oxide phase transformed to crystalline γ-Aluminum oxide. Electron irradiation caused no change in the composition of the interface of W/aluminum oxide, but diffusion was enhanced on the interfaces of aluminum oxide/Ti and Ti/Cu.

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