Abstract
In this paper a new procedure is presented for predicting the effect of electromagnetic interference (EMI) on the dc shift, harmonic, and intermodulation performance of an NMOSFET current mirror with a capacitor connected between the mirror node and the ground. Closed-form approximate expressions are obtained for the dc and the amplitudes of the fundamental, second- and third-harmonic, and second- and third-order intermodulation output current components resulting from exciting the mirror by a dc biasing current plus a superimposed multisinusoidal EMI. Simulation results are included.
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