Abstract
Thin film bulk acoustic resonators (FBARs) were prepared with ZnO films using Al and Cr/Au electrodes. ZnO films were deposited by RF sputtering. Al and Cr/Au electrodes were prepared by DC sputtering and thermal evaporation respectively. S parameters were measured with a network analyzer. From TEM images, it is apparent that there are some defects on ZnO with Al electrode while no defects are detected on ZnO with Cr/Au. Also, an intermediate layer is observed between ZnO and Al but nothing between ZnO and Au. As a result of those differences, the resonant frequency, the width between series and parallel frequency and the value of S11 between peak and valley, are different between the FBAR samples with Al or Cr/Au even though both FB AR samples have the same thickness of ZnO.
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