Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method

Abstract

Electrodeposition of metallic multilayers on Si is normally preceded by the vapour deposition of a metallic layer. Since vapour deposition produces an additional step in the production process, direct electrodeposition of multilayers on Si is desirable. However, direct electrodeposition on Si has resulted in low magnetoresistance (MR) – of the order of 1% – at room temperature. With the use of (i) electroless plated copper back contact, (ii) composite potentiostatic pulses, (iii) horizontal electrode configuration and (iv) non-continuous mode of deposition, a room temperature MR of 5.8% has been achieved.