Abstract
Pt1-xPdxO thin films were prepared by rf reactive co-sputtering of Pt and Pd target to obtain high quality PtO thin films. To reveal the effect of free carrier absorption caused by high carrier concentration in PtO thin films, its electrical properties and optical properties were measured and analyzed. In the result, quantities of absorption coefficient in visible to near ultraviolet light region were different between PtO films because of the difference of each carrier concentration. Despite this, these absorption coefficients become nearly the same quantities when subtraction of free-carrier absorption was applied. The effect of free carrier absorption decreases with increase of composition of PdO.
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